Vds 0[V] Drain-to-source voltage Vbs 0[V] Base-to-source voltage Vgs 2[V] Gate-to-source voltage phim 5.0535[V] Metal work function Na 1E17[1/cm^3] Background doping Nd 1E18[1/cm^3] Maximum donor doping concentration W_mos 1e-6[m] MOSFET width h_mos 0.2[um] MOSFET height L_mos 1[um] MOSFET length L_g 0.24e-6[m] Gate length L_s 0.32[um] Source length L_d 0.32[um] Drain length eps_ins 4.2 Insulator relative permittivity d_ins 5E-9[m] Insulator thickness C0 eps_ins*epsilon0_const/d_ins Gate capacitance per unit area