T0 293.15[K] Reference temperature w_BJT 2.5[um] BJT width d_BJT 1[um] BJT thickness l_BJT 3[um] BJT length w_E 1.2[um] Emitter width w_EB 0.35[um] Emitter-base spacing w_cE w_E/2-d_E Emitter contact width w_cB w_BJT/2-w_EB-w_E/2 Base contact width w_cC w_BJT Collector contact width d_E 0.15[um] Emitter junction depth d_B 0.3[um] Base junction depth d_C 0.3[um] Collector junction depth N_epi 2e16[1/cm^3] Epitaxial layer doping N_B 9e17[1/cm^3] Base doping N_E 2e20[1/cm^3] Emitter doping N_C 8e19[1/cm^3] Collector doping V_C 0.5[V] Applied voltage: collector V_B 0.5[V] Applied voltage: base V_E 0[V] Applied voltage: emitter I_B -1[uA] Inward applied current: base