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Model ID: 114

Semiconductor Diode

A semiconductor diode consists of two regions with different doping: a p-type region with a dominant concentration of holes, and an n-type region with a dominant concentration of electrons.

The model presented here formulates the problem using three dependent variables: psi (electric potential), n, and p. Even in this model’s simplest form, strong nonlinear dependencies are present.

With 0.5V forward bias, the holes from the p-type region flow into and through the low doped n-type region without significant recombination. As a result, the hole concentration increases several orders of magnitude in the n-type region.

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