RF-Heated Hot Wall Furnace for Semiconductor Processing
Model ID: 972
Furnace reactors are used in the fabrication of semiconductors to grow layers on wafers. These can also be used for epitaxial growth, which is a key technology for fabrication of electrical devices. A silicon carbide growth takes place in graphite susceptors at very high temperatures (~2000 oC), which are heated with RF coils. The design of the chamber is crucial to reach a uniform temperature, efficient heating, and control of high temperature regions. This model shows a furnace design that heats a susceptor of graphite, using an 8 kW RF signal at 20 kHz. The temperature distribution over the wafer is extracted, as well as the temperature on the outer Quartz tube. At these high temperature the heat flux is dominated by radiation.
|SEMICONDUCTOR MANUFACTURING: A susceptor of graphite is heated through induction. The model shows the temperature distribution inside the susceptor and on the quartz tube.|