t_epi 10[um] "Epi layer thickness"
t_sub 2[um] "Substrate thickness"
d_g 3.8e-2[cm] "Gate diameter"
area_g pi*(d_g/2)^2 "Gate area"
r_epi 0.75[ohm*cm] "Epi layer resistivity"
r_sub 0.005[ohm*cm] "Substrate resistivity"
Nd_epi 1/(e_const*1450[cm^2/V/s]*r_epi) "Epi layer doping"
Nd_sub 1/(e_const*1450[cm^2/V/s]*r_sub) "Substrate doping"
epsr_ox 3.9 "Oxide dielectric constant"
t_ox 60[nm] "Oxide thickness"
C_ox epsr_ox*epsilon0_const/t_ox*area_g "Oxide capacitance"
rhos_ox e_const*9e11[cm^-2] "Oxide fixed charge"
Nss 2e11[cm^-2*eV^-1] "Surface state density"
Ew0 0.2[V] "Width of continuous trapping levels"
f0 50[Hz] "AC frequency"
phiM 4.5[V] "Metal work function"
v_th 1e7[cm/s] "Thermal velocity"
sigma_n 1e-15[cm^2] "Electron capture cross section"
sigma_p 2.2e-16[cm^2] "Hole capture cross section"
Vg 0[V] "Gate voltage"
Vac 1[mV] "AC voltage"