acceleration 0 "Acceleration (g)"
VtestL 0[V] "Test voltage, left side"
VtestR 0[V] "Test voltage, right side"
tSi 2[um] "Silicon thickness"
tOx 1.6[um] "Oxide thickness"
l_PM 448[um] "Proof mass length"
w_PM 100[um] "Proof mass width"
n_st 3 "Number of self test fingers"
n_f 21 "Number of sense fingers"
w_f 4[um] "Finger width"
l_f 114[um] "Finger length"
g_f 1[um] "Finger gap"
g_st 3[um] "Self test finger gap"
x_st 3[um]+1*(w_f+g_st) "Self test finger starting position"
x_f (l_PM-(n_f-1)*3*(w_f+g_f)-w_f)/2 "Sense finger starting position"
w_eh 4[um] "Etch hole size"
p_eh 18[um] "Etch hole period"
l_sp 280[um] "Spring length"
w_sp 2[um] "Spring width"
g_sp 1[um] "Spring gap"
w_sp_conn 4[um] "Spring connection width"
l_anch_base 17[um] "Anchor base length"
w_anch_base 17[um] "Anchor base width"
r_anch 3[um] "Anchor radius"
x_anch 12[um] "Anchor position"
l_e_s 120[um] "Short electrode length"
l_e_l 140[um] "Long electrode length"
l_p 16[um] "Pad length"
w_p 8[um] "Pad width"
r_an 3[um] "Electrode anchor radius"
l_ovrlp 104[um] "Finger overlap length"
l_spAssm l_anch_base+2*(w_f+w_sp)+3*g_sp "Spring assembly length"
l_polySi l_PM+2*l_spAssm "Total length"
hw_polySi w_PM/2+l_f+l_p+l_e_l-l_ovrlp "Total half width"