Die Applications Galerie bietet COMSOL Multiphysics® Tutorial- und Demo-Application-Dateien, die für die Bereiche Elektrik, Struktur, Akustik, Fluid, Wärme und Chemie relevant sind. Sie können diese Beispiele als Ausgangspunkt für Ihre eigene Simulationsarbeit verwenden, indem Sie das Tutorialmodell oder die Demo-Application-Datei und die dazugehörigen Anleitungen herunterladen.
Suchen Sie über die Schnellsuche nach Tutorials und Apps, die für Ihr Fachgebiet relevant sind. Beachten Sie, dass viele der hier vorgestellten Beispiele auch über die Application Libraries zugänglich sind, die in die COMSOL Multiphysics® Software integriert und über das Menü File verfügbar sind.
Vortex Lattice Formation in a Rotating Bose–Einstein Condensate
This tutorial model solves the Gross–Pitaevskii Equation for the vortex lattice formation in a rotating Bose–Einstein condensate bound by a harmonic trap. The equation is essentially a nonlinear single-particle Schrödinger Equation, with the inter-particle interaction represented by a ... Mehr lesen
Density-Gradient and Schrödinger–Poisson Results for a Silicon Inversion Layer
This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional ... Mehr lesen
Surface-Trap-Induced Hysteresis in an InAs Nanowire FET — a Density-Gradient Analysis
This tutorial analyzes the hysteresis of the conductance-gate-voltage (G-Vg) curves of an InAs nanowire FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational costs. The ... Mehr lesen
Gross–Pitaevskii Equation for Bose–Einstein Condensation
This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a ... Mehr lesen
MOSCAP 1D Small Signal
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Mehr lesen
Lombardi Surface Mobility
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... Mehr lesen