Heterodimensional Charge-Carrier Confinement in Sub-Monolayer InAs in GaAs

S. Harrison[1], M. Young[1], M. Hayne[1], P. D. Hodgson[1], R. J. Young[1], A. Strittmatter[2], A. Lenz[2], U. W. Pohl[2], D. Bimberg[2]
[1]Department of Physics, Lancaster University, Lancaster, UK
[2]Institut für Festkörperphysik, Berlin, Germany
Veröffentlicht in 2014

Low-dimensional semiconductor nanostructures, in which charge carriers are confined in a number of spatial dimensions, are the focus of much solid-state physics research, offering superior optical and electronic properties over their bulk counterparts. Both two-dimensional (2D) and zero-dimensional (0D) structures have seen wide-ranging applications in laser diodes, solar cells and LEDs to name but a few. Here we present the concept of heterodimensionality: the ability of a structure to confine electrons and their positive counterparts, holes, in different dimensionalities. Our heterodimensional samples contain stacked layers of sub-monolayer (SML) indium arsenide (InAs) depositions in gallium arsenide (GaAs), i.e. incomplete single atomic layers of InAs in a GaAs matrix. The