Stochastic Approach in Approximation of the Transient Plasma Sheath Behavior in FEM

J. Brcka
TEL US Holdings, Inc., Albany, NY, USA
Veröffentlicht in 2008

Recently, the advanced plasma tools have been using very high frequency power sources (>100 MHz) and their combination to excite plasma utilized in semiconductor technology. This approach is evoking the regimes that are less understood and currently a subject to many studies and experimental investigations.

The paper describes quasi-stochastic approach applied for sheath properties and used in dual frequency (f1>>f2 ) capacitively coupled plasma transient simulations. The initial phase of these modeling activities and investigations shown a good numerical stability of a computational scheme. The validation of a proposed numerical model and its equivalence to full transient solution are discussed.

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