Die Application Gallery bietet COMSOL Multiphysics® Tutorial- und Demo-App-Dateien, die für die Bereiche Elektromagnetik, Strukturmechanik, Akustik, Strömung, Wärmetransport und Chemie relevant sind. Sie können diese Beispiele als Ausgangspunkt für Ihre eigene Simulationsarbeit verwenden, indem Sie das Tutorial-Modell oder die Demo-App-Datei und die dazugehörigen Anleitungen herunterladen.
Suchen Sie über die Schnellsuche nach Tutorials und Apps, die für Ihr Fachgebiet relevant sind. Beachten Sie, dass viele der hier vorgestellten Beispiele auch über die Application Libraries zugänglich sind, die in die COMSOL Multiphysics® Software integriert und über das Menü File verfügbar sind.
This model computes the input impedance/admittance to an acoustic system in the frequency domain. The system here represents a typical measurement setup used for testing hearing aids and includes domains with thermoviscous boundary layer losses. The input admittance, computed in the ... Mehr lesen
This model shows how to model a simple Shockley diode— a four-layer PNPN semiconductor device. The Shockley diode is also named as thyristor. In this model, the Analytic Doping Model node is utilized to define the doping profiles for each domain. A time-dependent study is employed to ... Mehr lesen
Drop tests are used to evaluate how consumer products respond to impacts and high accelerations. In this example, the Solid Mechanics, Explicit Dynamics interface is used to numerically simulate a drop test of a mobile phone, highlighting the permanent deformation of the aluminum case ... Mehr lesen
When a droplet is placed on a substrate on which surface acoustic waves (SAWs) are traveling, the energy of the SAWs is transferred into the droplet to form an acoustic field. The transferred energy is attenuated and generates a streaming flow. This type of streaming enables contactless ... Mehr lesen
This example shows how to model a FinFET in 3D. The I-V characteristics of the device are simulated. First, the gate voltage is swept to obtain the drain current versus gate voltage plot. Then, the drain current versus drain voltage characteristics are computed for fixed gate voltages. Mehr lesen
In a diode or a transistor, when a p-n junction is reverse-biased (the p-side is connected to a lower potential than the n-side), ideally, no current should flow. However, due to minority carriers (electrons in the p-side and holes in the n-side), a small current, known as the reverse ... Mehr lesen
In this example, the dynamics of a hopping hoop is simulated. A rigid rolling ring with a point mass on the perimeter can, under certain conditions, jump up from the surface on which it is rolling. The effects of different parameters like initial velocity and friction are explored. You ... Mehr lesen
A tube connection consisting of a flange with eight prestressed bolts is subjected to a set of loads: an internal pressure, an axial force, and an external bending moment. Due to two symmetry planes, it is sufficient to only consider one quarter of the full geometry. The study ... Mehr lesen
This example is an adaptation of our DC Characteristics of a MOS Transistor (MOSFET) model where the metal and dielectric domains are modeled explicitly and not via a boundary condition. Therefore, the potential profile inside the metal and the insulator can be observed. Mehr lesen
This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer. This kind of device geometry is simple and cheap to ... Mehr lesen