Simulation of Heating Sol-Gel Thin Film By Laser Pulse Train

J. Zhang[1], Y. Mizuyama[1], W. Xiong[2], Y. Zhou [2], and Y. Lu[2]
[1]Panasonic Boston Laboratory, Newton, MA, USA
[2]University of Nebraska, Lincoln, NE, USA
Veröffentlicht in 2010

Simulation of laser pulse-train (25ns, 60 kHz and 3000 pulses) heating Sol-Gel thin film using COMSOL Multiphysics software is investigated. The results show two kinds of temperatures formed on film surface by laser pulse-train heating. One is a single pulse induced transient peak-temperature, which is up to ~1635oC on both Si and glass substrates. The other is the accumulated-temperature generated by accumulating residual-temperature at the end of each pulse period, which is up to ~75oC on Si and ~500oC on glass substrates, respectively. The peak-temperature only depends on the laser intensity. However, the accumulated-temperature not only depends on the laser intensity, but also the pulse repetition rate and the thermal properties of the substrate in particular.

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