Laser Heating of a Silicon Wafer

Application ID: 13835


A silicon wafer is heated up by a laser that moves radially in and out over time. In addition, the wafer itself is rotated on its stage. The incident heat flux from the laser is modeled as a spatially distributed heat source on the surface. The transient thermal response of the wafer is shown. The peak, average, and minimum temperature during the heating process is computed, as well as the temperature variations across the wafer.

Dieses Beispiel veranschaulicht Anwendungen diesen Typs, die mit den folgenden Produkten erstellt wurden: