Die Modell Galerie umfasst COMSOL Multiphysics Modelldateien aus einer Vielzahl von Anwendungsbereichen, die von Mechanik und Elektronik über Strömungen bis zur Chemie reichen. Sie können fertige Modelle herunterladen sowie Schritt-für-Schritt-Anleitungen, mit denen Sie die Modelle nachbauen können, und verwenden Sie die Modelle als Ausgangspunkt für Ihre eigenen Anwendungen. Nutzen Sie die Quick Search, um die für Ihren Fachbereich relevanten Modelle zu finden. Um die Dateien herunterzuladen, loggen Sie sich ein oder erzeugen Sie einen COMSOL Access Account, der mit einer gültigen COMSOL Lizenz assoziiert ist. Beachten Sie, dass viele der hier vorgestellten Beispiele auch über die in die COMSOL Multiphysics® Software integrierte Anwendungsbibliotheken zugänglich und im Menü Datei verfügbar sind.


Programming of a Floating Gate EEPROM Device

This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a function of the control gate voltage for two different amounts of stored charge. Time dependent studies are then ...

Heterojunction 1D

This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The simulated energy levels are compared between each configuration in order to illustrate the origin of the charge ...

DC Characteristics of a MESFET

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to ...

MOSCAP 1D

The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both the low-frequency and the high-frequency C-V curves are computed.

MOSCAP 1D Small Signal

The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both the low- and high-frequency C-V curves are computed using the approach of small-signal analysis. The model ...

Caughey-Thomas Mobility

With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The Caughey Thomas mobility model adds high field velocity scattering to an existing mobility model (or to a ...

Lombardi Surface Mobility

Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using Matthiessen’s rule. This model demonstrates how to use the Lombardi surface mobility model for the electron ...

Gross–Pitaevskii Equation for Bose–Einstein Condensation

This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation physics interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a potential energy contribution proportional to the local particle density. The eigenvalue study is not ...

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