Die Application Gallery bietet COMSOL Multiphysics® Tutorial- und Demo-App-Dateien, die für die Bereiche Elektromagnetik, Strukturmechanik, Akustik, Strömung, Wärmetransport und Chemie relevant sind. Sie können diese Beispiele als Ausgangspunkt für Ihre eigene Simulationsarbeit verwenden, indem Sie das Tutorial-Modell oder die Demo-App-Datei und die dazugehörigen Anleitungen herunterladen.
Suchen Sie über die Schnellsuche nach Tutorials und Apps, die für Ihr Fachgebiet relevant sind. Beachten Sie, dass viele der hier vorgestellten Beispiele auch über die Application Libraries zugänglich sind, die in die COMSOL Multiphysics® Software integriert und über das Menü File verfügbar sind.
This tutorial performs steady-state and transient analysis of the response of a PIN diode to constant and pulsed radiation, respectively. The effect of radiation is modeled as spatially uniform generation of electron-hole pairs within the device. At high dose rates the separation of the ... Mehr lesen
In this second half of a two-part example, a 3D model of a trench-gate IGBT is built by extruding the 2D model from the first half. Unlike the 2D model, now it is possible to arrange the alternating n+ and p+ emitters along the direction of extrusion as in the real device. This more ... Mehr lesen
This tutorial simulates the turn-off transient (reverse recovery) of a simple PIN diode with an inductive load, loosely based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 256, 2008 edition). Unlike the book, which assumes an initial constant current ramp ... Mehr lesen
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... Mehr lesen
This tutorial demonstrates the use of the density-gradient formulation to include the effect of quantum confinement in the device physics simulation of a silicon inversion layer. This formulation requires only a moderate increase of computational resources as compared to the conventional ... Mehr lesen
Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using ... Mehr lesen
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Mehr lesen
This benchmark example builds two models of a cross-bridge Kelvin resistor used for extracting the specific contact resistivity. The first model simulates the system in 3D, using the contact resistance feature built in the Semiconductor interface. The other model is a 2D approximation of ... Mehr lesen
This tutorial simulates the turn-on transient (forward recovery) of a simple PIN diode, based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 242, 2008 edition). The diode is current driven with a constant ramp rate of 1e9, 2e9 and 1e10 A/cm^2/sec and a ... Mehr lesen
This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a ... Mehr lesen