Analysis of Stress-induced Pockels Effect in Silicon Waveguides
Veröffentlicht in 2015
The recently discovered Pockels effect in strained silicon has made silicon a promising candidate material for optical modulators and switches. In this work, we propose a model that links the electro-optic effect to the applied strain (in fact to the strain gradient). This model may be a big breakthrough in silicon photonic for the optimization of optical devices in the presence of future experimental data.
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- manganelli_presentation.pdf - 1.49MB
- manganelli_poster.pdf - 0.42MB
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- manganelli_abstract.pdf - 0.28MB