InGaN/AlGaN Double Heterostructure LED

Application ID: 20299


This model simulates a GaN based light emitting diode. The emission intensity, spectrum, and quantum efficiency are calculated as a function of the driving current. Direct radiative recombination across the band gap is modeled, as well as non-radiative Auger and trap-assisted recombination processes. This results in a sub-linear increase in emission intensity with increasing current, which is a common characteristic of LED devices known as LED droop. Note that polarization charge effects and quantum confinement effects within the thin active region are not included in the model.

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