GaAs P–N Junction Infrared LED

Application ID: 20691

This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer.

This kind of device geometry is simple and cheap to produce and similar LEDs are found in many household applications, e.g. the IR emitters in TV remote controls.

In this model the Optical Transition feature is used to calculate the electroluminescence from the device. The electronic properties are computed and the efficiency of the light production is assessed. Also, by visualizing the spacial distribution of the radiative recombination it is possible to make design suggestions to maximize the total efficiency of the output light.

Dieses Beispiel veranschaulicht Anwendungen diesen Typs, die mit den folgenden Produkten erstellt wurden: