Die Modell Galerie umfasst COMSOL Multiphysics Modelldateien aus einer Vielzahl von Anwendungsbereichen, die von Mechanik und Elektronik über Strömungen bis zur Chemie reichen. Sie können fertige Modelle herunterladen sowie Schritt-für-Schritt-Anleitungen, mit denen Sie die Modelle nachbauen können, und verwenden Sie die Modelle als Ausgangspunkt für Ihre eigenen Anwendungen. Nutzen Sie die Quick Search, um die für Ihren Fachbereich relevanten Modelle zu finden. Um die Dateien herunterzuladen, loggen Sie sich ein oder erzeugen Sie einen COMSOL Access Account, der mit einer gültigen COMSOL Lizenz assoziiert ist.

3D Analysis of a Bipolar Transistor

This model shows how to set up a 3D simulation of a n-p-n bipolar transistor. It is a 3D version of the device shown in the Bipolar Transistor model, and demonstrates how to extend semiconductor modeling into 3D using COMSOL Multiphysics. As in the 2D version of this model, the device is simulated whilst operating in the common-emitter regime. A voltage driven study is computed to characterize ...

GaAs p-n Junction Infrared LED Diode

This model simulates an LED that emits in the infrared part of the electromagnetic spectrum. The device structure is made up of a single p-n junction formed by a layer of p-type doping near the top surface of an otherwise n-type wafer. This kind of device geometry is simple and cheap to produce and similar LEDs are found in many household applications, e.g. the IR emitters in TV remote ...

PN-Junction 1D

This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by Kramer and Hitchon.

GaAs PIN Photodiode

This simple model demonstrates how to use the Semiconductor Optoelectronics interfaces to model a simple GaAs PIN diode structure. Both the stimulated and spontaneous emission in the semiconductor are accounted for. The corresponding adsorption of the light and the associated change in the complex refractive index are included in a self consistent manner.

PN-Diode Circuit

This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D meshed p-n junction diode to a circuit containing a sinusoidal source, a resistor and a ground to form a ...

Heterojunction 1D

This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are ...

Bipolar Transistor

This model shows how to set up a simple Bipolar Transistor model. The output current-voltage characteristics in the common-emitter configuration are computed and the common-emitter current gain is determined.

Breakdown in a MOSFET

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current ...

Wavelength Tunable LED

This application computes the emission properties of a AlGaN/InGaN LED. The emission intensity, spectrum, and efficiency are calculated for an applied voltage or as a function of voltage over a selected range. The indium composition in the light-emitting InGaN region can be varied in order to control the emission wavelength. When the emission occurs within the visible spectrum the corresponding ...

Programming of a Floating Gate EEPROM Device

This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a function of the control gate voltage for two different amounts of stored charge. Time dependent studies are then ...

11 - 20 of 20 First | < Previous | Next > | Last