Die Application Gallery bietet COMSOL Multiphysics® Tutorial- und Demo-App-Dateien, die für die Bereiche Elektromagnetik, Strukturmechanik, Akustik, Strömung, Wärmetransport und Chemie relevant sind. Sie können diese Beispiele als Ausgangspunkt für Ihre eigene Simulationsarbeit verwenden, indem Sie das Tutorial-Modell oder die Demo-App-Datei und die dazugehörigen Anleitungen herunterladen.
Suchen Sie über die Schnellsuche nach Tutorials und Apps, die für Ihr Fachgebiet relevant sind. Beachten Sie, dass viele der hier vorgestellten Beispiele auch über die Application Libraries zugänglich sind, die in die COMSOL Multiphysics® Software integriert und über das Menü File verfügbar sind.
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson ... Mehr lesen
This model shows how to model the avalanche breakdown due to the impact ionization in a Silicon Carbide diode. The current-voltage (I-V) characteristics of the device are presented as well as the electric field distribution plot. Furthermore, the carrier generation term has been computed ... Mehr lesen
For a description of this model, see our accompanying blog post "Can COMSOL Multiphysics® Solve the Hydrogen Atom?". Mehr lesen
This model extracts spice parameters for a silicon p-n junction diode. The spice parameters are used to create a lumped-element equivalent circuit model of a half-wave rectifier that is compared to a full device level simulation. In this example, a device model is made by connecting a 2D ... Mehr lesen
This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift–diffusion model. The model uses the Transport of Charge Carriers interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of the EDLs in ... Mehr lesen
This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by ... Mehr lesen
This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by ... Mehr lesen
This tutorial simulates the turn-off transient (reverse recovery) of a simple PIN diode with an inductive load, loosely based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 256, 2008 edition). Unlike the book, which assumes an initial constant current ramp ... Mehr lesen
This model captures the dynamic resistive switching behavior of an oxide-based memristor. The device features a thin metal oxide layer sandwiched between two metal electrodes. When a voltage is applied, oxygen vacancies within the oxide layer migrate, acting as charge carriers and ... Mehr lesen
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... Mehr lesen
