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COMSOL News Magazine 2017

Thermal Analysis of a Bipolar Transistor

This model demonstrates how to couple the *Semiconductor* interface to the *Heat Transfer in Solids* interface. A thermal analysis is performed on the existing [bipolar transistor model](/model/bipolar-transistor-14615) in the case when the device is operated in the active-forward configuration. The *Semiconductor* interface calculates the carrier dynamics and currents within the device and ...

Bipolar Transistor

This model shows how to set up a simple Bipolar Transistor model. The output current-voltage characteristics in the common-emitter configuration are computed and the common-emitter current gain is determined.

Breakdown in a MOSFET

MOSFETs typically operate in three regimes depending on the drain-source voltage for a given gate voltage. Initially the current-voltage relation is linear, this is the Ohmic region. As the drain-source voltage increases the extracted current begins to saturate, this is the saturation region. As the drain-source voltage is further increased the breakdown region is entered, where the current ...

Wavelength Tunable LED

This application computes the emission properties of a AlGaN/InGaN LED. The emission intensity, spectrum, and efficiency are calculated for an applied voltage or as a function of voltage over a selected range. The indium composition in the light-emitting InGaN region can be varied in order to control the emission wavelength. When the emission occurs within the visible spectrum the corresponding ...

Surface Trapping in a Silicon Nanowire Gate-All-Around Device

A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs. This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the ...

Schottky Contact

Schottky Contact This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental measurements found in the literature

Double Barrier 1D

The double barrier structure is of interest because of its application in semiconductor devices such as resonant-tunneling diodes. This verification example demonstrates the *Schrödinger Equation* interface to set up a simple 1D GaAs/AlGaAs double barrier structure to analyze the quasibound states and their time evolution, the resonant tunneling phenomenon, and the transmission as a function of ...

Superlattice Band Gap Tool

The Superlattice Band Gap Tool helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The tool uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice structure. Device engineers can use the tool to quickly compute the effective band gap for a given periodic structure and ...

MOSFET with Mobility Models

This model shows how to add several linked mobility models to the simple MOSFET example.

Heterojunction 1D

This one-dimensional model simulates three different heterojunction configurations under forward and reverse bias. The model shows the difference in using the continuous quasi-Fermi levels model as opposed to the thermionic emission model to determine the current transfer occurring between the different materials creating the junction under bias. The energy levels obtained with the model are ...