Die Application Gallery bietet COMSOL Multiphysics® Tutorial- und Demo-App-Dateien, die für die Bereiche Elektromagnetik, Strukturmechanik, Akustik, Strömung, Wärmetransport und Chemie relevant sind. Sie können diese Beispiele als Ausgangspunkt für Ihre eigene Simulationsarbeit verwenden, indem Sie das Tutorial-Modell oder die Demo-App-Datei und die dazugehörigen Anleitungen herunterladen.
Suchen Sie über die Schnellsuche nach Tutorials und Apps, die für Ihr Fachgebiet relevant sind. Beachten Sie, dass viele der hier vorgestellten Beispiele auch über die Application Libraries zugänglich sind, die in die COMSOL Multiphysics® Software integriert und über das Menü File verfügbar sind.
This model calculates the DC characteristics of a simple MOSFET. The drain current versus gate voltage characteristics are first computed in order to determine the threshold voltage for the device. Then the drain current vs drain voltage characteristics are computed for several gate ... Mehr lesen
This simple benchmark model computes the potential and carrier concentrations for a one-dimensional p-n junction using both the finite element and finite volume methods. The results are compared with an equivalent device from the book, "Semiconductor Devices: A Simulation Approach," by ... Mehr lesen
This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson ... Mehr lesen
This tutorial analyzes the DC characteristics of an InSb p-Channel FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational resources. The confinement effect is applied both ... Mehr lesen
For a description of this model, see our accompanying blog post "Can COMSOL Multiphysics® Solve the Hydrogen Atom?". Mehr lesen
This model shows how to model an electrolyte-gated organic field-effect transistor based on a general drift–diffusion model. The model uses the Transport of Charge Carriers interface and the Electrostatics interface. The transistor characteristics are visualized. Formation of the EDLs in ... Mehr lesen
This tutorial simulates the turn-off transient (reverse recovery) of a simple PIN diode with an inductive load, loosely based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 256, 2008 edition). Unlike the book, which assumes an initial constant current ramp ... Mehr lesen
This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by ... Mehr lesen
This benchmark model simulates a graded heterojunction using the thermionic emission formulation for the charge transfer over the junction. It shows the additional contribution to the current density from the quantum tunneling effect across the potential barrier, using the WKB ... Mehr lesen
With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The ... Mehr lesen
