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Die Modell Galerie umfasst COMSOL Multiphysics Modelldateien aus einer Vielzahl von Anwendungsbereichen, die von Mechanik und Elektronik über Strömungen bis zur Chemie reichen. Sie können fertige Modelle herunterladen sowie Schritt-für-Schritt-Anleitungen, mit denen Sie die Modelle nachbauen können, und verwenden Sie die Modelle als Ausgangspunkt für Ihre eigenen Anwendungen. Nutzen Sie die Quick Search, um die für Ihren Fachbereich relevanten Modelle zu finden. Um die Dateien herunterzuladen, loggen Sie sich ein oder erzeugen Sie einen COMSOL Access Account, der mit einer gültigen COMSOL Lizenz assoziiert ist.

Small Signal Analysis of a MOSFET

This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current.

Surface Trapping in a Silicon Nanowire Gate-All-Around Device

A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs. This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the ...

MOSFET with Mobility Models

This model shows how to add several linked mobility models to the simple MOSFET example.

Thermal Analysis of a Bipolar Transistor

This model demonstrates how to couple the Semiconductor interface to the Heat Transfer in Solids interface. A thermal analysis is performed on the existing bipolar transistor model in the case when the device is operated in the active-forward configuration. The Semiconductor interface calculates the carrier dynamics and currents within the device and outputs a heating term due to electrical ...

DC Characteristics of a MESFET

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to ...

Lombardi Surface Mobility

Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using Matthiessen’s rule. This model demonstrates how to use the Lombardi surface mobility model for the electron ...

Caughey-Thomas Mobility

With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The Caughey Thomas mobility model adds high field velocity scattering to an existing mobility model (or to a ...

Programming of a Floating Gate EEPROM Device

This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a function of the control gate voltage for two different amounts of stored charge. Time dependent studies are then ...

Wavelength Tunable LED - new

This application computes the emission properties of a AlGaN/InGaN LED. The emission intensity, spectrum, and efficiency are calculated for an applied voltage or as a function of voltage over a selected range. The indium composition in the light-emitting InGaN region can be varied in order to control the emission wavelength. When the emission occurs within the visible spectrum the corresponding ...

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