Electrostatics with charge conservation | | | | |
Frequency domain | | | | |
Stationary | | | | |
Time dependent | | | | |
Semiconductor | | | | |
Semiconductor Initialization | | | | |
Small-Signal Analysis, Frequency Domain | | | | |
Stationary | | | | |
Time Dependent | | | | |
Semiconductor Optoelectronics, Beam Envelopes1 | | | | |
Frequency-Stationary1 | | | | |
Frequency-Transient1 | | | | |
Small-Signal Analysis, Frequency Domain1 | | | | |
Semiconductor Optoelectronics, Frequency Domain1 | | | | |
Frequency-Stationary1 | | | | |
Frequency-Transient1 | | | | |
Small-Signal Analysis, Frequency Domain1 | | | | |
Surface Charge Density | | | | |
Thin Insulator Gate | | | | |
Continuity/Heterojunction | | | | |
Continuous Quasi-Fermi Levels Model | | | | |
Thermionic Emission Model | | | | |
Electrostatics Boundary Conditions | | | | |
Distributed Capacitance | | | | |
Electric Displacement Field | | | | |
Electric Potential | | | | |
External Surface Charge Accumulation | | | | |
Floating Gate | | | | |
Floating Potential | | | | |
Ground | | | | |
Periodic Condition | | | | |
Surface Charge Accumulation | | | | |
Terminal | | | | |
Zero Charge | | | | |
Insulation | | | | |
Surface Traps: Discrete Energy Levels | | | | |
Surface Traps: Continuous Energy Levels |
Insulator Interface | | | | |
Surface Traps: Continuous Energy Levels | | | | |
Surface Traps: Discrete Energy Levels | | | | |
Tunneling: Fowler-Nordheim Model | | | | |
Tunneling: User defined | | | | |
Metal Contact | | | | |
Ideal Ohmic | | | | |
Ideal Schottky | | | | |
Fermi-Dirac | | | | |
Maxwell-Boltzmann | | | | |
Finite Element | | | | |
Finite Element (Log Equation Formulation) | | | | |
Finite Volume | | | | |
Electrostatics Domain Properties | | | | |
Charge Conservation | | | | |
Space Charge Density | | | | |
Semiconductor Material Model | | | | |
Incomplete Ionization | | | | |
Band gap narrowing | | | | |
Empirical models: Slotboom and Jain-Roulston | | | | |
Analytic Doping Model | | | | |
Box distribution (with preset profiles) | | | | |
User defined distribution | | | | |
Geometric Doping Model | | | | |
Boundary Selection for Doping Profile | | | | |
Preset profiles | | | | |
User defined profile | | | | |
Auger Recombination | | | | |
Direct Recombination | | | | |
Impact Ionization Generation | | | | |
Shockley-Read-Hall Recombination | | | | |
User-Defined Generation | | | | |
User-Defined Recombination | | | | |
Arora Mobility Model | | | | |
Caughey-Thomas Mobility Model | | | | |
Fletcher Mobility Model | | | | |
Lombardi Surface Mobility Model | | | | |
Power Law Mobility Model | | | | |
User Defined Mobility Model | | | | |
Indirect Optical Transitions | | | | |
Empirical silicon absorption | | | | |
User defined absorption | | | | |
Optical Transitions | | | | |
Spontaneous/Stimulated Emission | | | | |
Direct bandgap model | | | | |
User defined transition model | | | | |
Analytic Trap Density | | | | |
Box distribution (with preset profiles) | | | | |
User defined distribution | | | | |
Geometric Trap Density | | | | |
Boundary Selection for Trap Density | | | | |
Preset profiles | | | | |
User defined profile | | | | |